Efficient CAD Tool for Noise Modeling of RF/Microwave Field Effect Transistors
نویسنده
چکیده
منابع مشابه
An Efficient Technique for Substrate Coupling Parasitic Extraction with Application to RF/Microwave Spiral Inductors (RESEARCH NOTE)
This paper presents an efficient modeling method, based on the microstrip lines theory, for the coupling between a substrate backplane and a device contact. We derive simple closed-form formulas for rapid extraction of substrate parasitics. We use these formulas to model spiral inductors as important substrate-noise sources in mixed-signal systems. The proposed model is verified for the freque...
متن کاملA Unified Approach to RF and Microwave Noise Parameter Modeling in Bipolar Transistors
A unified approach to RF and microwave noise parameter modeling in bipolar transistors is presented. Circuit level noise parameters including the minimum noise figure, the optimum generator admittance, and the noise resistance are analytically linked to the fundamental noise sources and the y-parameters of the transistor through circuit analysis of the chain noisy two-port representation. Compa...
متن کاملDesign of Power FETs Based on Coupled Electro-Thermal- Electromagnetic Modeling
A comprehensive modeling approach is applied to the study of pHEMT transistors for microwave power amplifier applications. This approach combines physical, electromagnetic and thermal simulations to model large power transistors used in these applications, allowing both the individual finger contribution and the global performance to be investigated in an efficient manner, which can be used wit...
متن کاملMicrowave noise characterization of graphene field effect transistors
Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.
متن کاملRF MOSFET: recent advances, current status and future trends
Recent advances in complementary metal oxide semiconductor (CMOS) processing, continuous scaling of gate length, and progress in silicon on insulator have stirred serious discussions on the suitability of metal-oxide semiconductor field-effect transistors (MOSFETs) for RF/microwave applications. This paper covers the recent advances and current status of mainstream CMOS as the dominating techno...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017